| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor e definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-07 BFP193 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteris |
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Infineon |
Surface mount wideband silicon NPN RF bipolar transistor list • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz, 2 V, 5 mA • High gain Gms = 21 dB at 1.8 GHz, 2 V, 20 mA • OIP3 = 22 dBm at 1.8 GHz, 2 V, 20 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC J |
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Infineon |
NPN RF bipolar transistor list • Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness • High transition frequency fT = 57 GHz to enable best in class noise performance at high frequencies: NFmin = 0.65 dB at 3.5 |
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Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor eter Symbol Value Unit Junction - soldering point2) RthJS 105 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2 |
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Infineon |
Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon |
Surface mount high linearity silicon NPN RF bipolar transistor list • Minimum noise figure NFmin = 0.7 dB at 1.8 GHz, 1.5 V, 5 mA • High gain Gms = 21.5 dB at 1.8 GHz, 1.5 V, 50 mA • OIP3 = 25.5 dBm at 1.8 GHz, 2 V, 50 mA Product validation Qualified for industrial applications according to the relevant tests of |
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Infineon |
Surface mount high linearity wideband silicon NPN RF bipolar transistor list • Minimum noise figure NFmin = 1.7 dB at 1.9 GHz, 3 V, 50 mA • High gain Gma = 15.5 dB at 1.9 GHz, 3 V, 90 mA • OIP3 = 31 dBm at 1.9 GHz, 3 V, 90 mA Product validation Qualified for industrial applications according to the relevant tests of JEDE |
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Infineon |
PNP Silicon RF Transistor l Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V V(BR)CEO |
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Infineon Technologies AG |
NPN Silicon RF Transistor Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC |
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Infineon Technologies AG |
NPN Silicon RF Transistor llector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V hFE 30 100 200 |
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Infineon Technologies AG |
NPN Silicon RF Transistor eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 1 |
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Infineon Technologies AG |
NPN Silicon RF Transistor otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = |
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Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
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Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-08 BFP183W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Valu |
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Infineon Technologies |
Low profile robust silicon NPN RF bipolar transistor list • Minimum noise figure NFmin = 0.9 dB at 1.8 GHz, 2 V, 5 mA • High gain Gms = 20 dB at 1.8 GHz, 2 V, 20 mA • OIP3 = 24.5 dBm at 1.8 GHz, 2 V, 20 mA • High ESD robustness, typical 1 kV (HBM) Product validation Qualified for industrial applicatio |
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Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon |
Robust Low Noise Silicon Germanium Bipolar RF Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon Technologies AG |
NPN Silicon RF Transistor Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC |
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Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) K/W 1 2013-10-15 BFP181 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC |
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