| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
Power Transistor • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q |
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Infineon |
Power Transistor • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max@T |
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Infineon |
Power Transistor •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforindustrialgradeapplicationsaccord |
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Infineon |
E6 Power Transistor & JSZSQ][ O\R KFI( JE',.1 JE',,* #!" JE',,* >F &2+/0 )/0 $ '+3. )/0 # *142,. )/0 % HPQ[T ) @Tg ET`U^`\P]RT EP`P\TbT`a EP`P\TbT` JP[cT I]Xb L;J 6 KX [Of 0/* L I;J$]\%&[Of *(+3 W HU&bg^ 0- \9 @;&^cZaS /3 7 <]aa 6 .**L /(, jA 8 |
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Infineon |
IPB60R165CP • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max |
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Infineon |
MOSFET •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforindustrialgradeapplicationsaccord |
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Infineon Technologies |
MOSFET & # F/ 23 H E #F/ 2 3 H E #F/ # 91 E (2 0 V 0 E #F/ # 3951 $1 A "& 2 ( Y HE #F/ & > 8 A, ! = ' 8 , ;,; E Z# & 1 G8 J 8 A, ! C& 08 ; %G 1 8 8 + 1 8 1G ; G 8 ; Q # && && ' " 11 ; [ ; % ; 1 11 ; [ ; % A & T\]H T\]O %8 + - G B % |
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Infineon Technologies |
MOSFET • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stage |
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Infineon Technologies |
MOSFET • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stage |
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Infineon |
IGBT Module • LowSwitchingLosses • TrenchIGBT4 • VCEsatwithpositiveTemperatureCoefficient • LowVCEsat MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • Compactdesign • SolderContactTechnology • Rugged mounting due to integrated mou |
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