Document | DataSheet (1.01MB) |
CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS" C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrific.
• Extremely low losses due to very low FOM Rdson
*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free
Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6
drain pin 2
gate pin 1
source pin 3
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
.
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 6R160P6 |
Infineon |
MOSFET | |
2 | 6R165P |
Infineon |
IPB60R165CP | |
3 | 6R125P |
Infineon |
Power Transistor | |
4 | 6R125P |
VBsemi |
N-Channel Power MOSFET | |
5 | 6R190C6 |
Infineon Technologies |
MOSFET | |
6 | 6R190E6 |
Infineon |
E6 Power Transistor | |
7 | 6R190P6 |
Infineon |
Power Transistor | |
8 | 6R199P |
Infineon |
Power Transistor | |
9 | 6R1K4C6 |
Infineon Technologies |
MOSFET | |
10 | 6R1MBI100P-160 |
eupec GmbH |
Diode Module | |
11 | 6R1MBI75P-160 |
ETC |
Diode Module with Brake Diode | |
12 | 6R1TI30Y-080 |
Fuji Electric |
DIODE/TYRISTOR |