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6R125P Power Transistor

Features

• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ IPB60R125CP 650 V 0.125 Ω 53 nC PG-TO263 CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom Type IPB60R125CP Package PG-TO263 Ordering Code SP000088488 Marking 6R125P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain c.

6R125P Infineon Datasheet
PDF 931.95KB

CoolMOSTM Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ IPB60R125CP 650 V 0.125 Ω 53 nC PG-TO263 CoolMOS CP is specially.

6R125P VBsemi Datasheet
PDF 931.95KB

6R125P-VB TO247 www.VBsemi.com 6R125P-VB TO247 Datasheet N-Channel 650V(D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 0.06 273 46 79 Single FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and con.

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