Document | DataSheet (410.97KB) |
CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max@T j= 25°C Q g,typ IPA60R199CP 650 V 0.199 Ω 32 nC PG-TO220 CoolMOS CP is .
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max@T j= 25°C Q g,typ
IPA60R199CP
650 V 0.199 Ω
32 nC
PG-TO220
CoolMOS CP is designed for:
• Hard switching SMPS topologies
Type IPA60R199CP
Package PG-TO220
Marking 6R199P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current2)
Pulsed drain current3) Avalanche energy, single pulse
Symbol Conditions I D T .
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 6R190C6 |
Infineon Technologies |
MOSFET | |
2 | 6R190E6 |
Infineon |
E6 Power Transistor | |
3 | 6R190P6 |
Infineon |
Power Transistor | |
4 | 6R125P |
Infineon |
Power Transistor | |
5 | 6R125P |
VBsemi |
N-Channel Power MOSFET | |
6 | 6R160C6 |
Infineon Technologies |
MOSFET | |
7 | 6R160P6 |
Infineon |
MOSFET | |
8 | 6R165P |
Infineon |
IPB60R165CP | |
9 | 6R1K4C6 |
Infineon Technologies |
MOSFET | |
10 | 6R1MBI100P-160 |
eupec GmbH |
Diode Module | |
11 | 6R1MBI75P-160 |
ETC |
Diode Module with Brake Diode | |
12 | 6R1TI30Y-080 |
Fuji Electric |
DIODE/TYRISTOR |