Document | DataSheet (335.25KB) |
IPB60R165CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.165 Ω 39 nC PG-TO263 CoolMOS CP is speciall.
• Lowest figure-of-merit R ONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V
0.165 Ω 39 nC
PG-TO263
CoolMOS CP is specially designed for:
• Hard switching topologies for Server and Telecom
Type IPB60R165CP
Package PG-TO263
Ordering Code SP000096439
Marking 6R165P
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed.
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 6R160C6 |
Infineon Technologies |
MOSFET | |
2 | 6R160P6 |
Infineon |
MOSFET | |
3 | 6R125P |
Infineon |
Power Transistor | |
4 | 6R125P |
VBsemi |
N-Channel Power MOSFET | |
5 | 6R190C6 |
Infineon Technologies |
MOSFET | |
6 | 6R190E6 |
Infineon |
E6 Power Transistor | |
7 | 6R190P6 |
Infineon |
Power Transistor | |
8 | 6R199P |
Infineon |
Power Transistor | |
9 | 6R1K4C6 |
Infineon Technologies |
MOSFET | |
10 | 6R1MBI100P-160 |
eupec GmbH |
Diode Module | |
11 | 6R1MBI75P-160 |
ETC |
Diode Module with Brake Diode | |
12 | 6R1TI30Y-080 |
Fuji Electric |
DIODE/TYRISTOR |