| No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
N-Channel MOSFET ·Low on-resistance ·Fast switching speed ·Parallel use is easy ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor R6015ENX ·ABSOLUT |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Low Forward Voltage ·Guard -Ring for Stress Protection ·High Surge Capability ·175℃ Operating Junction Temperature ·Pb-Free Package is Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati |
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INCHANGE |
N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switchi |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 936mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=1.7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.4Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.43Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·D |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variati |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·100% avalanche tested ·Min |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·100% avalanche tested ·Min |
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INCHANGE |
Schottky Barrier Rectifier ·With TO-220 packaging ·Soft, fast switching capability ·Low forward voltage drop ·Low leakage current ·High frequency operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply |
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INCHANGE |
N-Channel MOSFET ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25 |
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INCHANGE |
N-Channel MOSFET ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply · |
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INCHANGE |
N-Channel MOSFET ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply · |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE M |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PA |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25 |
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