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IPD60R600C6 |
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| Part Number | IPD60R600C6 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPD60R600C6,IIPD60R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust... |
| Features |
·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 19 PD Total Dissipation @TC=25℃ 63 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channe... |
| Document |
 IPD60R600C6 Data Sheet
PDF 237.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD60R600C6 |
Infineon Technologies |
MOSFET |
|
| 2 | IPD60R600CM8 |
Infineon |
MOSFET |
|
| 3 | IPD60R600CP |
Infineon Technologies |
Power Transistor |
|
| 4 | IPD60R600CP |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPD60R600E6 |
Infineon Technologies |
MOSFET |
|