IPA60R600P7 |
Part Number | IPA60R600P7 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minim... |
Features |
·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA60R600P7 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 6 4 16 PD Total Dissipation @TC=25℃ 21 Tj Max. Operating Junction ... |
Document |
IPA60R600P7 Data Sheet
PDF 197.21KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPA60R600P6 |
Infineon |
MOSFET | |
2 | IPA60R600P6 |
INCHANGE |
N-Channel MOSFET | |
3 | IPA60R600P7 |
Infineon |
MOSFET | |
4 | IPA60R600C6 |
Infineon Technologies |
MOSFET | |
5 | IPA60R600C6 |
INCHANGE |
N-Channel MOSFET |