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IPD70R600CE |
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| Part Number | IPD70R600CE |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPD70R600CE,IIPD70R600CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust... |
| Features |
·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 700 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10.5 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 86 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS ... |
| Document |
 IPD70R600CE Data Sheet
PDF 238.48KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD70R600CE |
Infineon |
MOSFET |
|
| 2 | IPD70R600P7S |
Infineon |
MOSFET |
|
| 3 | IPD70R1K4CE |
Infineon |
MOSFET |
|
| 4 | IPD70R1K4CE |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPD70R1K4P7S |
Infineon |
MOSFET |
|