R6015ENX |
Part Number | R6015ENX |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor ·FEATURES ·Low on-resistance ·Fast switching speed ·Parallel use is easy ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliabl... |
Features |
·Low on-resistance ·Fast switching speed ·Parallel use is easy ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor R6015ENX ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage;static Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 15 8.1 30 PD Total Dissipation 60 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ SYMBO L PAR... |
Document |
R6015ENX Data Sheet
PDF 196.87KB |
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