Huajing Microelectronics CS8 fiche technique

No.	Partie #	Fabricant	Description
1	CS8N50A8R	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 8 100 0.7 l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Power swi
2	CS8N65A8H	HUAJING MICROELECTRONICS	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:14pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（T
3	CS8N60A8D	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 2
4	CS830FA9RD	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc=
5	CS830A4RD	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc=
6	CS830A8RD	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc=
7	CS840A8H	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.75Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:18pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（
8	CS8N80FA9H	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤1.25Ω) l Low Gate Charge (Typical Data:48nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（
9	CS830A3RD	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc=
10	CS8N65A0H	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:14pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（T
11	CS8N80FA9D	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:47nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃
12	CS8N50FA9R	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc
13	CS8N65ARR	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤1.0Ω) l Low Gate Charge (Typical Data:29nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（
14	CS8N65FA9H	HUAJING MICROELECTRONICS	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:14pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（T
15	CS8N60FA9D	HUAJING MICROELECTRONICS	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 2
16	CS8N25A4H	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.47Ω) l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absol
17	CS8N25A8H	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.47Ω) l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absol
18	CS8N25FA9	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l Low ON Resistance(Rdson≤0.47Ω) l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absol
19	CS840A8D	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:10.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc
20	CS840FA9D	Huajing Microelectronics	Silicon N-Channel Power MOSFET l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:10.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 2