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CS8N60FA9D |
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| Part Number | CS8N60FA9D |
| Manufacturer | HUAJING MICROELECTRONICS |
| Description | CS8N60F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche ... |
| Features |
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt a3
PD
VESD(G-S)
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche En... |
| Document |
 CS8N60FA9D Data Sheet
PDF 329.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS8N60FA9H |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
|
| 2 | CS8N60F |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |
|
| 3 | CS8N60 |
FOSHAN BLUE ROCKET |
N-Channel MOSFET |
|
| 4 | CS8N60A8D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 5 | CS8N60A8H |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
|