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CS8N65FA9H |
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| Part Number | CS8N65FA9H |
| Manufacturer | HUAJING MICROELECTRONICS |
| Description | CS8N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 8 45 0... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤1.3Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:14pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
Drain-to-Source Voltage
650
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt... |
| Document |
 CS8N65FA9H Data Sheet
PDF 321.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS8N65F |
FOSHAN BLUE ROCKET |
N-Channel MOSFET |
|
| 2 | CS8N65A0H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 3 | CS8N65A8H |
HUAJING MICROELECTRONICS |
Silicon N-Channel Power MOSFET |
|
| 4 | CS8N65ARR |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 5 | CS8N60 |
FOSHAN BLUE ROCKET |
N-Channel MOSFET |
|