CS830A4RD |
Part Number | CS830A4RD |
Manufacturer | Huajing Microelectronics |
Description | CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 5 75 1.... |
Features |
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
VESD(G-S)
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pul... |
Document |
CS830A4RD Data Sheet
PDF 254.35KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CS830A3RD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS830A8RD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS830 |
ETC |
VDMOS Transistors | |
4 | CS830 |
LZG |
N-Channel MOSFET | |
5 | CS8305E |
Chipstar Micro-electronics |
5.0W mono / ultra-low EMI / filterless Class-D audio amplifier |