CS8N25A4H |
Part Number | CS8N25A4H |
Manufacturer | Huajing Microelectronics |
Description | CS8N25 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃)... |
Features |
l Fast Switching l Low ON Resistance(Rdson≤0.47Ω) l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test
Applications:
Automotive、DC Motor Control and Class D Amplifier.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C ... |
Document |
CS8N25A4H Data Sheet
PDF 639.15KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CS8N25A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS8N25FA9 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS8N50A8R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS8N50FA9R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS8N60 |
FOSHAN BLUE ROCKET |
N-Channel MOSFET |