No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
2SK2938 • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline ADE-208-561B (Z) 3rd. Edition Jun 1998 LDPAK D 44 G S 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2938(S |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2931 Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc |
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Hitachi Semiconductor |
Silicon N-Channel Dual Gate MOS FET • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage G |
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Hitachi Semiconductor |
2SK2926 • Low on-resistance RDS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK –2 D G S 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain ADE-208-535 1st. Edition 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS(on) = 0.040Ω typ. • 4V gate drive devices. • High speed switching Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltag |
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Hitachi Semiconductor |
2SK2930 • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS =0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2932 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2934 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2935 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2936 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK2937 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2938(S) Absolute Maximum Ratings (Ta = |
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Hitachi Semiconductor |
Silicon N-Channel Dual-Gate MOSFET • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage G |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK –2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to sou |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2938(S) Absolute Maximum Ratings (Ta = |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2956 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage D |
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Hitachi Semiconductor |
Silicon N Channel MOS FET • Low on-resistance R DS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 D 4 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2957(L),2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source |
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