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2SK2930 |
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| Part Number | 2SK2930 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can b... |
| Features |
• Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 35 140 35 35 105 50 150 –55 to +150 Unit V V A A A A mJ W °C °C ... |
| Document |
 2SK2930 Data Sheet
PDF 53.14KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2931 |
Renesas |
Silicon N-Channel MOSFET |
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| 2 | 2SK2931 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | 2SK2932 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 4 | 2SK2933 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 5 | 2SK2934 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
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