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K2926 |
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| Part Number | K2926 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK–2 D G S 44... |
| Features |
• Low on-resistance RDS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK –2 D G S 44 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain ADE-208-535 1st. Edition 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Ta = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I *1 D(pulse... |
| Document |
 K2926 Data Sheet
PDF 51.98KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K2925 |
Hitachi |
Silicon N-Channel MOSFET |
|
| 2 | K2929 |
Hitachi Semiconductor |
2SK2929 |
|
| 3 | K2900-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 4 | K2902-01MR |
Fuji Electric |
2SK2902-01MR |
|
| 5 | K2915 |
Toshiba Semiconductor |
2SK2915 |
|