| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
P-Channel General Purpose Amplifier 0 VDS = -10V, ID = -10µA VDS = -10V, VGS = 0 VDS = -10V, VGS = 0, f = 1.0KHz VDS = -10V, VGS = 0, f = 1.0KHz VDS = -10V, VGS = 0, f = 1.0KHz -0.3 800 Min. 20 20 8.0 -15 5000 32 16 Typ. Max. Units V nA V mA µmhos pF pF Gate-Source Breakdwon Voltage G |
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Fairchild Semiconductor |
PNP General Purpose Amplifier Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3905 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N3905 PNP General Purpose |
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Fairchild Semiconductor |
NPN General Purpose Amplifier Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN3565 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation PN3565 NPN General Purpose A |
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Fairchild Semiconductor |
NPN General Purpose Amplifier mbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3390 / 3391/A / 3392 / 3393 625 5.0 83.3 200 Units mW |
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Fairchild Semiconductor |
NPN General Purpose Amplifier mbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3390 / 3391/A / 3392 / 3393 625 5.0 83.3 200 Units mW |
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Central Semiconductor |
(2N3xxx) PNP Switching and General Purpose |
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Fairchild Semiconductor |
NPN General Purpose Amplifier Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3415 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N3415 NPN General Purpose |
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Boca Semiconductor Corporation |
GENERAL PURPOSE TRANSISTOR |
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General Semiconductor |
(2N3670 - 2N3668) 12.5A SILICON CONTROLLED RECTIFIERS |
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General Semiconductor |
(2N3670 - 2N3668) 12.5A SILICON CONTROLLED RECTIFIERS |
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Comset Semiconductor |
General Purpose Amplifier s Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter saturation Voltage Base-Emitter saturation Voltage DC Cur |
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Fairchild Semiconductor |
NPN General Purpose Amplifier mbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3390 / 3391/A / 3392 / 3393 625 5.0 83.3 200 Units mW |
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Fairchild Semiconductor |
NPN General Purpose Amplifier mbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3390 / 3391/A / 3392 / 3393 625 5.0 83.3 200 Units mW |
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Fairchild Semiconductor |
NPN General Purpose Amplifier mbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3390 / 3391/A / 3392 / 3393 625 5.0 83.3 200 Units mW |
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Fairchild Semiconductor |
NPN General Purpose Amplifier 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3704 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N3704 NPN General Purpose Amplifier (continued) Electrical Chara |
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Fairchild Semiconductor |
NPN General Purpose Amplifier c Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3859A 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N3859A NPN General Purpo |
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ON Semiconductor |
PNP General-Purpose Amplifier • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD |
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General Semiconductor |
(2N3670 - 2N3668) 12.5A SILICON CONTROLLED RECTIFIERS |
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Fairchild Semiconductor |
NPN General Purpose Amplifier mbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3390 / 3391/A / 3392 / 3393 625 5.0 83.3 200 Units mW |
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Fairchild Semiconductor |
NPN General Purpose Amplifier d Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3416 / 2N3417 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 341 |
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