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2N3859A |
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| Part Number | 2N3859A |
| Manufacturer | Fairchild Semiconductor |
| Description | 2N3859A Discrete POWER & Signal Technologies 2N3859A E CB TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector curre... |
| Features |
c
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N3859A 625 5.0 83.3 200
Units
mW mW/ °C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
2N3859A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C =... |
| Document |
 2N3859A Data Sheet
PDF 22.58KB |
| Distributor | Stock | Price | Buy |
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