Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2N3417 |
Click to view a larger image
| Part Number | 2N3417 |
| Manufacturer | Fairchild Semiconductor |
| Description | 2N3416 / 2N3417 Discrete POWER & Signal Technologies 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring ... |
| Features |
d
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N3416 / 2N3417 625 5.0 83.3 200
Units
mW mW/°C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
3416-3417, Rev B
2N3416 / 2N3417
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Coll... |
| Document |
 2N3417 Data Sheet
PDF 24.91KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N341 |
New Jersey Semi-Conductor |
N-P-N GROWN SILICON TRANSISTORS |
|
| 2 | 2N3410DCSM |
Semelab Plc |
Dual Bipolar NPN Devices |
|
| 3 | 2N3414 |
Micro Electronics |
NPN SILICON TRANSISTOR |
|
| 4 | 2N3414 |
Central Semiconductor |
NPN SILICON TRANSISTOR |
|
| 5 | 2N3415 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|