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2N3391 |
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| Part Number | 2N3391 |
| Manufacturer | Fairchild Semiconductor |
| Description | 2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393 Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as ... |
| Features |
mbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N3390 / 3391/A / 3392 / 3393 625 5.0 83.3 200
Units
mW mW/°C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
3390-93, Rev B
2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitt... |
| Document |
 2N3391 Data Sheet
PDF 25.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N339 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 2 | 2N339 |
New Jersey Semi-Conductor |
N-P-N GROWN SILICON TRANSISTORS |
|
| 3 | 2N3390 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 4 | 2N3390 |
GE Solid State |
(2N3390 - 2N3394) SILICON TRANSISTORS |
|
| 5 | 2N3391 |
GE Solid State |
(2N3390 - 2N3394) SILICON TRANSISTORS |
|