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2N3415 |
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| Part Number | 2N3415 |
| Manufacturer | Fairchild Semiconductor |
| Description | 2N3415 Discrete POWER & Signal Technologies 2N3415 E CB TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector current... |
| Features |
Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N3415 625 5.0 83.3 200
Units
mW mW/°C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
2N3415
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 ... |
| Document |
 2N3415 Data Sheet
PDF 22.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N341 |
New Jersey Semi-Conductor |
N-P-N GROWN SILICON TRANSISTORS |
|
| 2 | 2N3410DCSM |
Semelab Plc |
Dual Bipolar NPN Devices |
|
| 3 | 2N3414 |
Micro Electronics |
NPN SILICON TRANSISTOR |
|
| 4 | 2N3414 |
Central Semiconductor |
NPN SILICON TRANSISTOR |
|
| 5 | 2N3415 |
Central Semiconductor |
NPN SILICON TRANSISTOR |
|