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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings |
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Fairchild Semiconductor |
250V n-Channel MOSFET ,-))62 8 (&) && 7& (( ±7) * ' ' ' * ; ' ; *$ = =$6 6 6 9 * 8 '! : '! +!'! : 8 |
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Fairchild Semiconductor |
FQP6N60 • • • • • • 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings |
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Fairchild Semiconductor |
900V N-Channel MOSFET ()) %& 93 79 7 ±9) * ' ' ' * = ' = *6 @ @68 8 8 ; * : '! < '! +!'! < : ? + !!6 : |
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Fairchild Semiconductor |
150V N-Channel MOSFET = 5 = !$ ; , 1.9*:2 1.)++:2 ; )*+ &' '* 9* & ±9* , ( ( ( , > |
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Fairchild Semiconductor |
800V N-Channel MOSFET • • • • • • 5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS 3 5 " " TO-220 FQP Series ! S Absolute Maximum Ratings S |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S |
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Fairchild Semiconductor |
400V N-Channel MOSFET • 6.0 A, 400 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 3 A • Low Gate Charge (Typ. 16 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR |
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Fairchild Semiconductor |
500V n-Channel MOSFET /*5%61 /*+''61 7 %'' %% ,% 55 ±,' ( & & & ( ; & ; (4 ? ?46 6 6 8 ( 7 &! 9 &! |
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Fairchild Semiconductor |
N-Channel MOSFET • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 70ns) TM Description These N-Channel enhan |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A • Low gate charge ( Typ. 14.5nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field e |
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Fairchild Semiconductor |
800V N-Channel MOSFET This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superi |
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Fairchild Semiconductor |
FQP6N40C • 6.0 A, 400 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 3 A • Low Gate Charge (Typ. 16 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar |
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Fairchild Semiconductor |
900V N-Channel MOSFET • • • • • • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S A |
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Fairchild Semiconductor |
450V N-Channel MOSFET • • • • • • 6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM |
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Fairchild Semiconductor |
700V N-Channel MOSFET ()) %& 28 &: ; ±2) * ' ' ' * > ' > * @ @67 7 7 < * 9 '! = '! +!'! = 9 ? + !!6 9 |
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Fairchild Semiconductor |
FQP6N70 ()) %& 28 &: ; ±2) * ' ' ' * > ' > * @ @67 7 7 < * 9 '! = '! +!'! = 9 ? + !!6 9 |
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Fairchild Semiconductor |
SSP6N70A Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) 1 2 3 SSP6N70A BVDSS = 700 V RDS(on) = |
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Fairchild Semiconductor |
FQP6N80 • • • • • • 5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS 3 5 " " TO-220 FQP Series ! S Absolute Maximum Ratings S |
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