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FDP6N60ZU |
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| Part Number | FDP6N60ZU |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• RDS(on) = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A • Low gate charge ( Typ. 14.5nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched ... |
| Document |
 FDP6N60ZU Data Sheet
PDF 608.54KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDP6021P |
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20V P-Channel MOSFET |
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| 2 | FDP6030BL |
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| 3 | FDP6030BL |
ON Semiconductor |
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| 4 | FDP6030L |
Fairchild Semiconductor |
N-Channel MOSFET |
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| 5 | FDP6035AL |
Fairchild Semiconductor |
N-Channel MOSFET |
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