FQP6N45 |
Part Number | FQP6N45 |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • 6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP6N45 450 6.2 3.9 25 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalan... |
Document |
FQP6N45 Data Sheet
PDF 571.42KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQP6N40C |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
2 | FQP6N40CF |
Fairchild Semiconductor |
N-Channel MOSFET | |
3 | FQP6N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
4 | FQP6N25 |
Fairchild Semiconductor |
250V n-Channel MOSFET | |
5 | FQP6N50 |
Fairchild Semiconductor |
500V n-Channel MOSFET |