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FQP6N40C |
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| Part Number | FQP6N40C |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
| Features |
• 6.0 A, 400 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 3 A • Low Gate Charge (Typ. 16 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Volt... |
| Document |
 FQP6N40C Data Sheet
PDF 1.17MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQP6N40CF |
Fairchild Semiconductor |
N-Channel MOSFET |
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| 2 | FQP6N45 |
Fairchild Semiconductor |
450V N-Channel MOSFET |
|
| 3 | FQP6N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET |
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| 4 | FQP6N25 |
Fairchild Semiconductor |
250V n-Channel MOSFET |
|
| 5 | FQP6N50 |
Fairchild Semiconductor |
500V n-Channel MOSFET |
|