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FQP6N40CF |
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| Part Number | FQP6N40CF |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 70ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for... |
| Document |
 FQP6N40CF Data Sheet
PDF 1.07MB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQP6N40C |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 2 | FQP6N45 |
Fairchild Semiconductor |
450V N-Channel MOSFET |
|
| 3 | FQP6N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET |
|
| 4 | FQP6N25 |
Fairchild Semiconductor |
250V n-Channel MOSFET |
|
| 5 | FQP6N50 |
Fairchild Semiconductor |
500V n-Channel MOSFET |
|