Fairchild Semiconductor C50 fiche technique

No.	Partie #	Fabricant	Description
1	FDPC5018SG	Fairchild Semiconductor	MOSFET General Description Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A Low
2	C5027	Fairchild Semiconductor	KSC5027 MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUP
3	KSC5027	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor
4	ILC5061	Fairchild Semiconductor	Power Supply reset Monitor with 1% Precision • • • • • • All-CMOS design in SOT-23 or SC70 package ±1% precision in Reset Detection Only 1µA of Iq 2mA of sink current capability Built-in hysteresis of 5% of detection voltage Voltage options of 2.6, 2.9, 3.1, 4.4, and 4.6V fit most supervisory a
5	KSC5021	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor ce Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 2.5A, IB1 = -IB2 = 1A L = 1mH, Clamped VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.6A VCE = 5V, IC =
6	KSC5020	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor ain Bandwidth Product Turn On Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 1.5A, IB1=-IB2= 0.6A L = 2mH, Clamped VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.3A VCE = 5V, IC = 1.5A IC = 1.
7	KSC5021F	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 2.5A, IB1 = -IB2 = 1A L = 1mH, Clamped ICBO Collector Cut-off Current IEBO Emitter Cut-off Current hFE1 hFE2 DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturat
8	KSC5029	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor dwidth Product Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 2A, IB1 = -IB2 = 0.4A L = 2mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.3A VCE = 5V, IC = 1.5A IC = 2A, IB =
9	KSC5047	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor • High Current Gain • Low Collector Emitter Saturation Voltage 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collecto
10	ILC5062	Fairchild Semiconductor	SOT-23 Power Supply reset Monitor with 1% precision • • • • • • • All-CMOS design in SOT-23 or SC70 package A grade ±1% precision in Reset Detection Standard grade : ±2% precision in Reset Detection Only 1µA of Iq Over 2mA of sink current capability Built-in hysteresis of 5% of detection voltage Volta
11	KSC5027F	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor Gain Bandwidth Product Turn On Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 1.5A, IB1 = -IB2 = 0.3A L = 2mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.2A VCE = 5V, IC = 1A IC =
12	KSC5030	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor width Product Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 3A, IB1 = -IB2 = 0.6A L = 1mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.4A VCE = 5V, IC = 2A IC = 3A, IB = 0.
13	KSC5039	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor = 1mA, IE = 0 IC = 5mA, IB = 0 IC = 1mA, IC=0 VCB = 500V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.3A IC = 2.5A, IB = 0.5A IC = 2.5A, IB = 0.5A VCE = 5V, IC = 0.1A VCB = 10V , f = 1MHz VCC =150V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 60Ω 10 40 1 3 0.8 10
14	RC5051	Fairchild Semiconductor	Programmable Synchronous DC-DC Controller for Low Voltage Microprocessors • Programmable output from 1.3V to 3.5V using an integrated 5-bit DAC • 85% efﬁciency typical • Adjustable operation from 80KHz to 1MHz • Integrated Power Good and Enable functions • Overvoltage protection • Overcurrent protection • Drives N-channel
15	C5039F	Fairchild Semiconductor	KSC5039F Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IC = 1mA, IC = 0 VCB = 500V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.3A IC = 2.5A, IB = 0.5A IC = 2.5A, IB = 0.5A VCE = 5V, IC = 0.1A VCB = 10V , f = 1MHz VCC=150V , IC = 2.5A, IB1 = -IB2 =
16	KSC5019	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor =0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=1V, IC=0.5A VCE=1V, IC=2A IC=2A, IB=50mA VCE=1V, IC=2A VCE=1V, IC=0.5A VCB=10V, IE=0, f=1MHz 10 6 140 70 600 200 0.2 0.86 150 27 0.5 1.5 V V MHz pF Min. Typ. Max. 100 100 Units nA nA V V hFE Classification Classific
17	KSC5024	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor dth Product Turn ON Time Storage Time Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 3.5A, IB1=-IB2=1.4A L = 500µH, Clamped VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.8A VCE=5V, IC = 4A IC = 4A, IB = 0
18	KSC5025	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor width Product Turn On Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 5A, IB1 = -IB2 = 2A L = 500µH, Clamped VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1.2A VCE = 5V, IC = 6A IC = 6A, IB = 1.
19	KSC5026	Fairchild Semiconductor	NPN Epitaxial Silicon Transistor 5V, IC = 0.5A IC = 0.75A, IB = 0.15A IC = 0.75A, IB = 0.15A VCB =10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.1A VCC = 400V IC = 5IB1 = -2.5IB2 = 1A RL = 400Ω 35 15 0.5 3 0.3 10 8 Min. 1100 800 7 800 10 10 40 2 1.5 V V pF MHz µs µs µs Typ. Max. Units V V
20	KSC5026M	Fairchild Semiconductor	NPN Silicon Transistor • High Voltage and High Reliability • High Speed Switching • Wide SOA 1 TO-126 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage