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KSC5019 |
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| Part Number | KSC5019 |
| Manufacturer | Fairchild Semiconductor |
| Description | KSC5019 KSC5019 Low Saturation • VCE(sat)=0.5V at IC=2A, IB=50mA 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted S... |
| Features |
=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=1V, IC=0.5A VCE=1V, IC=2A IC=2A, IB=50mA VCE=1V, IC=2A VCE=1V, IC=0.5A VCB=10V, IE=0, f=1MHz 10 6 140 70 600 200 0.2 0.86 150 27 0.5 1.5 V V MHz pF Min. Typ. Max. 100 100 Units nA nA V V
hFE Classification
Classification hFE L 140 ~ 240 M 200 ~ 330 N 300 ~ 450 P 420 ~ 600
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC5019
Typical Characteristics
5
IB = 50mA IB = 40mA IB = 30mA IB = 20mA
10,000
EMITTER COMMON o Ta=25 C
EMITTER COMMON VCE =1V
IC[A], COLLECTOR CURRENT
4
3
hFE, DC CURRENT GAIN
1,000
100
2
IB = 10mA
1
IB = ... |
| Document |
 KSC5019 Data Sheet
PDF 38.39KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSC5020 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 2 | KSC5020 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 3 | KSC5020 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
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| 4 | KSC5021 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 5 | KSC5021 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|