KSC5026M |
Part Number | KSC5026M |
Manufacturer | Fairchild Semiconductor |
Description | KSC5026M — NPN Silicon Transistor KSC5026M NPN Silicon Transistor January 2011 Features • High Voltage and High Reliability • High Speed Switching • Wide SOA 1 TO-126 1. Emitter 2.Collector 3.Ba... |
Features |
• High Voltage and High Reliability • High Speed Switching • Wide SOA 1 TO-126 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1100 800 7 1.5 5 0.8 20 150 - 55 to 150 Units V V V A A A W °C °C Package Marking and Ordering Information Part Number Marking Package Packing Method Rem... |
Document |
KSC5026M Data Sheet
PDF 135.99KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSC5026 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | KSC5026 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
3 | KSC5026M |
INCHANGE |
NPN Transistor | |
4 | KSC5020 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor | |
5 | KSC5020 |
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NPN Epitaxial Silicon Transistor |