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KSC5039 |
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| Part Number | KSC5039 |
| Manufacturer | Fairchild Semiconductor |
| Description | KSC5039 KSC5039 High Voltage Power Switch Switching Application 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VC... |
| Features |
= 1mA, IE = 0 IC = 5mA, IB = 0 IC = 1mA, IC=0 VCB = 500V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.3A IC = 2.5A, IB = 0.5A IC = 2.5A, IB = 0.5A VCE = 5V, IC = 0.1A VCB = 10V , f = 1MHz VCC =150V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 60Ω 10 40 1 3 0.8 10 1.5 2.0 V V MHz pF µs µs µs Min. 800 400 7 10 10 µA µA Typ. Max. Units V V
* Plus test: PW=300µs, Duty Cycle=2% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC5039
Typical Characteristics
2.0 1.8
IB = 180mA
IC[A], COLLECTOR CURRENT
1.6 1.4 1.2 1.0
hFE, DC CURRENT GAIN
IB = 200mA IB = 160mA IB = 140mA IB = 12... |
| Document |
 KSC5039 Data Sheet
PDF 54.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSC5030 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
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| 2 | KSC5030 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
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| 3 | KSC5030 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 4 | KSC5030F |
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NPN Epitaxial Silicon Transistor |
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| 5 | KSC5039F |
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NPN Epitaxial Silicon Transistor |
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