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KSC5047 |
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| Part Number | KSC5047 |
| Manufacturer | Fairchild Semiconductor |
| Description | KSC5047 KSC5047 Feature • High Current Gain • Low Collector Emitter Saturation Voltage 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unles... |
| Features |
B2 = 0.12A R L = 4Ω 0.5 2.5 0.5 40 0.5 1.2 V V µs µs µs Min. 50 Typ. Max. 100 100 Units V µA µA
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
KSC5047
Typical Characteristics
VBE(sat), VCE(sat), SATURATION VOLTAGE
1000
10
VCE = 5V
IC=50 IB
hFE, DC CURRENT GAIN
100
1
VBE(sat) VCE(sat)
0.1
10
1 0.1
1
10
100
0.01 0.1
1
10
100
IC[A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
10000
100
IC[A], COLLECTOR CURRENT
Cob[pF], CAPACITANCE
1000
10
10... |
| Document |
 KSC5047 Data Sheet
PDF 41.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSC5042 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 2 | KSC5042F |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 3 | KSC5042M |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | KSC5019 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 5 | KSC5020 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|