| No. | Partie # | Fabricant | Description | Fiche Technique |
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Bruckewell |
N-Channel 700V MOSFET • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package available Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolu |
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Bruckewell |
800V N-Channel MOSFET • 100% EAS Test • Rugged Gate Oxide Technology • Extremely Low Intrinsic Capacitances • Remarkable Switching Characteristics • Unequalled Gate Charge: 10.5 nC (Typ.) • Extended Safe Operating Area Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V • RoHS complian |
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Bruckewell |
650V N-Channel MOSFET • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Power Factor Correction • LCD TV Power • Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Bo |
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Bruckewell |
800V N-Channel MOSFET Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.05 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings (Tc=25 |
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Bruckewell |
600V N-Channel MOSFET • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Power Factor Correction • LCD TV Power • Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Bo |
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Bruckewell |
400V N-Channel MOSFET • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V • Extended Safe Operating Area • Low gate charge (typ 30nC) • 100% Avalanche Tested • RoHS compliant package A |
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Bruckewell Technology |
800V N-Channel MOSFET • RDS(on) (typ 1.3 Ω )@VGS=10V • Gate Charge (Typical 39nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (150°C) • Halogen Free Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/d |
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Bruckewell Technology |
700V N-Channel MOSFET • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant / Halogen free package available Absolute Maximum Ratings Parameter Drain-Source Voltage (Tc=25°C unless otherwise noted) Symbol VDS I |
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Bruckewell Technology |
N-Channel Enhancement Mode Power MOSFET VDS=600V • BVDSS=650V typically @ Tj=150°C • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package ●APPLICATION: • Open Framed Power Supply • Adapter • STB RDS(on)max = 2.0 @VGS = 10 |
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Bruckewell |
500V N-Channel MOSFET • Originative New Design • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • 100% EAS Test • Extended Safe Operating Area • RoHS compliant package Application • High current, High speed switching • PFC (Power Factor Correction) |
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