MSF11N70 |
Part Number | MSF11N70 |
Manufacturer | Bruckewell |
Description | The MSF11N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220... |
Features |
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package available Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current @ TC=25°C ID Continuous Drain Current @ TC=100°C IDM Pulsed Drain Current IAR Avalanche Current EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt Value 700 ±30 1.1 6.5 40 10 658 1... |
Document |
MSF11N70 Data Sheet
PDF 667.35KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MSF10065V1 |
Maple Semiconductor |
Silicon Carbide Diode | |
2 | MSF10120V1 |
Maple Semiconductor |
Silicon Carbide Diode | |
3 | MSF10N40 |
Bruckewell |
400V N-Channel MOSFET | |
4 | MSF10N60 |
Bruckewell |
600V N-Channel MOSFET | |
5 | MSF10N65 |
Bruckewell |
650V N-Channel MOSFET |