MSF10N60 |
Part Number | MSF10N60 |
Manufacturer | Bruckewell |
Description | The MSF10N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220... |
Features |
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Application • Power Factor Correction • LCD TV Power • Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current Pulsed EAS Single Pulsed Avalanche Energy IAR Avalanche C... |
Document |
MSF10N60 Data Sheet
PDF 1.05MB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MSF10N65 |
Bruckewell |
650V N-Channel MOSFET | |
2 | MSF10N40 |
Bruckewell |
400V N-Channel MOSFET | |
3 | MSF10N80 |
Bruckewell |
800V N-Channel MOSFET | |
4 | MSF10N80A |
Bruckewell |
800V N-Channel MOSFET | |
5 | MSF10065V1 |
Maple Semiconductor |
Silicon Carbide Diode |