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MSF8N80-G |
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| Part Number | MSF8N80-G |
| Manufacturer | Bruckewell Technology |
| Description | This Power MOSFET is produced using the advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have high rugged avalanche charact... |
| Features |
• RDS(on) (typ 1.3 Ω )@VGS=10V • Gate Charge (Typical 39nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (150°C) • Halogen Free Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current (Tc=25°C unless otherwise specified) Parameter Value 800 8 5.0 32 ±30 850 17.8 4.5 59 - Derate above 25℃ 0.48 –55 to + 150 300 Unit V A A A V mJ mJ V/ns W W/℃ ℃ ℃ -Continuous (TC=25℃) -Continuous (TC=100℃) -Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Rep... |
| Document |
 MSF8N80-G Data Sheet
PDF 790.09KB |
| Distributor | Stock | Price | Buy |
|---|
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| 1 | MSF-07025BE |
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| 2 | MSF-07038DE |
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| 4 | MSF-13025BF |
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| 5 | MSF-13416AF |
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