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MSF10N80A |
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| Part Number | MSF10N80A |
| Manufacturer | Bruckewell |
| Description | MSF10N80A 800V N-Channel MOSFET FEATURES Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ.) Extended Safe Operating Area Lo... |
| Features |
Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.05 Ω (Typ.) @VGS=10V 100% Avalanche Tested
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol VDSS
ID
IDM VGS EAS IAR EAR dv/dt
PD
Parameter
Drain-Source Voltage
Drain Current Drain Current Drain Current
-Continuous (TC=25℃) -Continuous (TC=100℃) -Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation... |
| Document |
 MSF10N80A Data Sheet
PDF 1.25MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MSF10N80 |
Bruckewell |
800V N-Channel MOSFET |
|
| 2 | MSF10N40 |
Bruckewell |
400V N-Channel MOSFET |
|
| 3 | MSF10N60 |
Bruckewell |
600V N-Channel MOSFET |
|
| 4 | MSF10N65 |
Bruckewell |
650V N-Channel MOSFET |
|
| 5 | MSF10065V1 |
Maple Semiconductor |
Silicon Carbide Diode |
|