ZVN2120G - Zetex Semiconductors

ZVN2120G N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES: * VDS - 200V * RDS(ON) - 10Ω 7 ZVN2120G D PARTMARKING DETAIL - ZVN2120 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Te.

Features

* VDS - 200V
* RDS(ON) - 10Ω 7 ZVN2120G D PARTMARKING DETAIL - ZVN2120 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 200 320 2 ± 20 2 -55 to +150 UNIT V mA A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage SYMBOL MIN. BV DSS 200 1 3 20 10 100 500 10 100 85 20 7 8 8 20 12 MAX. UNIT CONDITIONS. V V nA µA µA mA.