ZVN2110C - Zetex Semiconductors

ZVN2110C N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 4Ω ZVN2110C G D S REFER TO ZVN2110A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage.

Features

* 100 Volt VDS
* RDS(on)= 4Ω ZVN2110C G D S REFER TO ZVN2110A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE 100 320 6 ± 20 UNIT V mA A V mW °C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-Sta.