ZVN2106B - Seme LAB

ZVN2106B N-CHANNEL ENHANCEMENT MODE MOSFET

45° TO-39 PACKAGE (TO-205AD) (Underside View) PIN 1 – SOURCE PIN 3 – DRAIN CASE – DRAIN PIN 2 – GATE This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliabil.

Features

2.54 (0.100) 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3
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• Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain DESCRIPTION 45° TO-39 PACKAGE (TO-205AD) (Underside View) PIN 1
  – SOURCE PIN 3
  – DRAIN CASE
  – DRAIN PIN 2
  – GATE This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Screening options are available..