www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=10Ω ZVN2120C G D S REFER TO ZVN2120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage.
* 200 Volt VDS
* RDS(on)=10Ω
ZVN2120C
G D
S
REFER TO ZVN2120A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg
E-Line TO92 Compatible VALUE 200 180 2
± 20
UNIT V mA A V mW °C
700 -55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-Sta.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ZVN2120A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
2 | ZVN2120G |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
3 | ZVN2106 |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
4 | ZVN2106 |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
5 | ZVN2106A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
6 | ZVN2106A |
Diodes |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
7 | ZVN2106B |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
8 | ZVN2106G |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
9 | ZVN2106G |
Diodes |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
10 | ZVN2110A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
11 | ZVN2110C |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
12 | ZVN2110G |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |