ZVN2110G - Zetex Semiconductors

ZVN2110G N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 7 FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED ZVN2110G D S PARTMARKING DETAIL COMPLEMENTARY TYPE ZVN2110 ZVP2110G D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipat.

Features

* 6A PULSE DRAIN CURRENT
* FAST SWITCHING SPEED ZVN2110G D S PARTMARKING DETAIL COMPLEMENTARY TYPE ZVN2110 ZVP2110G D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 100 500 6 ± 20 2 -55 to +150 UNIT V mA A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Volt.