WNMD2168 - Will Semiconductor

WNMD2168 Dual N-Channel MOSFET

The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2168 is Pb-free. WNMD2168 Http//:www.willsemi.com TSSOP-8L D1/D2 S2 S2 G2 8765 Feature.

Features

 Trench Technology
 Supper high density cell design
 Excellent ON resistance for higher DC current
 Extremely Low Threshold Voltage
 Small package TSSOP-8L 1234 D1/D2 S1 S1 G1 Pin configuration (Top view) 8765 2168 YYWW Applications
 Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit
 Power Switch
 Load Switch
 Charging Will Semiconductor Ltd. 1234 2168 YY WW =Logo =Device Code = Year = Week Marking Order information Device Package Shippin.