WNMD2166 - Will Semiconductor

WNMD2166 Dual N-Channel MOSFET

The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2166 is Pb-free. Features  Trench Technology  Supper high density cell design  Excell.

Features

 Trench Technology
 Supper high density cell design
 Excellent ON resistance for higher DC current
 Extremely Low Threshold Voltage
 Small package SOT-23-6L Applications
 Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit
 Power Switch
 Load Switch
 Charging Package G1 D1/D2 65 G2 4 1 23 S1 D1/D2 S2 Pin configuration (Top view) 6 54 2166 YYWW 1 23 2166 = Device Code YY = Year WW = Week Marking Order information Device WNMD2166 Package Shipping SOT-23.