WNMD2165 - Will Semiconductor

WNMD2165 Dual N-Channel MOSFET

The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2165 is Pb-free and Halogen-free. WNMD2165 Http//:www.sh-willsemi.com SOT-363 D.

Features

Pin configuration (Top view)
 Trench Technology
 Supper high density cell design
 Excellent ON resistance for higher DC current
 Extremely Low Threshold Voltage
 Small package SOT-363 Applications
 Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit
 Power Switch
 Load Switch
 Charging 6 54 65
* 1 23 65 = Device Code
* = Month (A~Z) Marking Order information Device Package Shipping WNMD2165-6/TR SOT-363 30.