WNMD2162 - Will Semiconductor

WNMD2162 Dual N-Channel MOSFET

Rds(on) (Ω) 0.016@ VGS=4.5V 0.019@ VGS=3.1V 0.022@ VGS=2.5V The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2162 is Pb-free and H.

Features

 Trench Technology
 Supper high density cell design
 Excellent ON resistance for higher DC current
 Extremely Low Threshold Voltage
 Small package PDFN2.9×2.8-8L Applications
 Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit
 Power Switch
 Load Switch
 Charging 1 23 4 S2 G2 S1 G1 Pin configuration (Top view) 8 765 2162 YYWW 1 23 4 2162 YY WW = Device Code = Year = Week Marking Order information.