The WNMD2155 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2155 is Pb-free. SOP-8L D1 D1 D2 8 76 D2 5 Features z Trench Technology 1 234 S1 G1 .
z Trench Technology 1 234 S1 G1 S2 G2 Pin configuration (Top view) 8 7 65 z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOP-8L Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging WNM2155 YYWW 1 2 34 =Logo WNM2155 = Device Code YY = Year WW = Week Marking Order information Device Package Shipping WNMD2155-8/TR S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WNMD2153 |
Will Semiconductor |
Dual N-Channel MOSFET | |
2 | WNMD2154 |
Will Semiconductor |
Dual N-Channel MOSFET | |
3 | WNMD2156 |
Will Semiconductor |
Dual N-Channel MOSFET | |
4 | WNMD2157 |
Will Semiconductor |
Dual N-Channel MOSFET | |
5 | WNMD2158 |
Will Semiconductor |
Dual N-Channel MOSFET | |
6 | WNMD2160 |
Will Semiconductor |
Dual N-Channel MOSFET | |
7 | WNMD2162 |
Will Semiconductor |
Dual N-Channel MOSFET | |
8 | WNMD2162A |
Will Semiconductor |
Dual N-Channel MOSFET | |
9 | WNMD2165 |
Will Semiconductor |
Dual N-Channel MOSFET | |
10 | WNMD2166 |
Will Semiconductor |
Dual N-Channel MOSFET | |
11 | WNMD2167 |
Will Semiconductor |
Dual N-Channel MOSFET | |
12 | WNMD2168 |
Will Semiconductor |
Dual N-Channel MOSFET |