HIGH VOLTAGE N-Channel MOSFET WFU4N60/WFD4N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4A □ Lower RDS(on) : 2.5Ω (Max) @VG=10V □ 100% Avalanche Tested TO‐252 TO‐251 G‐Gate,D‐Drain,S‐Sourse.
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 15 nC (Typ.) □ BVDSS=600V,ID=4A □ Lower RDS(on) : 2.5Ω (Max) @VG=10V □ 100% Avalanche Tested TO‐252 TO‐251 G‐Gate,D‐Drain,S‐Sourse Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -continuous (Tc=25℃) -continuous (Tc=100℃) Gate-Sourse Voltage Single Plused Avanche Energy (Note1) Avalanche Current (Note2) Power Dissipation (Tc=25℃) Operating an.
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been E.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WFU4N65S |
Winsemi |
Power MOSFET | |
2 | WFU430 |
Wisdom technologies |
N-Channel MOSFET | |
3 | WFU1N60 |
Winsemi |
Silicon N-Channel MOSFET | |
4 | WFU1N60C |
Winsemi |
Power MOSFET | |
5 | WFU1N60N |
Winsemi |
Silicon N-Channel MOSFET | |
6 | WFU1N80 |
Wisdom technologies |
N-Channel MOSFET | |
7 | WFU20N06 |
Winsemi |
Silicon N-Channel MOSFET | |
8 | WFU2N60 |
Winsemi |
Silicon N-Channel MOSFET | |
9 | WFU2N60 |
Wisdom technologies |
N-Channel MOSFET | |
10 | WFU2N60B |
Winsemi |
Silicon N-Channel MOSFET | |
11 | WFU2N65L |
Winsemi |
Silicon N-Channel MOSFET | |
12 | WFU5N50 |
Winsemi |
Silicon N-Channel MOSFET |